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參數資料
| 型號： | RFL1N15L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | RFL1N15L |
7-1
Semiconductor
Features
1A, 120V and 150V
r
DS(ON)
= 1.900
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and sole-
noid drivers. This performance is accomplished through a
special gate oxide design which provides full rated conduc-
tion at gate biases in the 3V to 5V range, thereby facilitating
true on-off power control directly from logic circuit supply
voltages.
Formerly developmental type TA09528.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N12L
TO-205AF
RFL1N12L
RFL1N15L
TO-205AF
RFL1N15L
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
RFL1N12L,
RFL1N15L
1A, 120V and 150V, 1.900 Ohm,
Logic Level, N-Channel Power MOSFETs
File Number
1513.2
[ /Title
(RFL1N
12L,
RFL1N1
5L)
/Subject
(1A,
120V
and
150V,
1.900
Ohm,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs,
TO-
205AF)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFL1N18 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N18L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-39 |
| RFL1N20 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs |
| RFL1N20L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | TO-39 |
| RFL1P08 | 制造商:Harris Corporation 功能描述: |
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