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參數資料
| 型號： | RFL1N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數： | 1/5頁 |
| 文件大小： | 43K |
| 代理商： | RFL1N20 |
5-1
Semiconductor
Features
1A, 180V and 200V
r
DS(ON)
= 3.65
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N18
TO-205AF
RFL1N18
RFL1N20
TO-205AF
RFL1N20
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
1442.2
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Power MOSFETs
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFL1N20L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | TO-39 |
| RFL1P08 | 制造商:Harris Corporation 功能描述: |
| RFL1P10 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs |
| RFL-2 | 制造商:Richco 功能描述:Bulk |
| RFL-22501SG-24 | 制造商:Oshino Lamps 功能描述: |
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