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參數資料
| 型號： | RFL2N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數： | 1/5頁 |
| 文件大小： | 44K |
| 代理商： | RFL2N06 |
5-1
Semiconductor
Features
2A, 50V and 60V
r
DS(ON)
= 0.95
SOA is Power-Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N05
TO-205AF
RFL2N05
RFL2N05
TO-205AF
RFL2N05
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
1497.2
RFL2N05,
RFL2N06
2A, 50V and 60V, 0.95 Ohm,
N-Channel Power MOSFETs
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相關代理商/技術參數 |
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| RFL2N06L | 制造商:Harris Corporation 功能描述: |
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| RFL4N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs |
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