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參數(shù)資料
| 型號： | RFL2N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET(2A, 60V, 0.950 Ω, 邏輯電平N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 306K |
| 代理商： | RFL2N06L |
1
File Number
1560.3
RFL2N06L
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Features
2A, 50V and 60V
r
DS(ON)
= 0.950
Design Optimized for 5V Gate Drives
Can be Driven from QMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N06L
TO-205AF
RFL2N06L
NOTE: When ordering, use the entire part number.
D
G
S
SOURCE
DRAIN
(CASE)
GATE
Data Sheet
October 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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