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參數(shù)資料
| 型號(hào)： | RFP22N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 22 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 49K |
| 代理商： | RFP22N10 |
4-499
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP22N10, RF1S22N10SM
22A, 100V 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Features
22A, 100V
r
DS(ON)
= 0.080
UIS SOA Rating Curve (Single Pulse)
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP22N10
TO-220AB
RFP22N10
RF1S22N10SM
TO-263AB
F1S22N10
NOTE: When ordering use the entire part number. Add the suffix, 9A,
toobtaintheTO-263ABvariantintapeandreel,e.g.RF1S22N10SM9A.
D
G
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
2385.3
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