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參數資料
| 型號： | RFT3055LE |
| 廠商： | INTERSIL CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET(2.0A, 60V, 0.150 Ω,N溝道,邏輯電平,ESD額定,功率MOS場效應管) |
| 中文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 96K |
| 代理商： | RFT3055LE |
8-143
File Number
4537.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFT3055LE
2.0A, 60V 0.150 Ohm, N-Channel, Logic
Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49158.
Features
2.0A, 60V
r
DS(ON)
= 0.150
2kV ESD Protected
Temperature Compensating PSPICE
Model
Thermal Impedance SPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFT3055LE
SOT-223
3055L
NOTE: RFT3055LE is available only in tape and reel.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
August 1999
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