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參數資料
| 型號： | RIC7113E4 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER |
| 中文描述： | 抗輻射高端和低端柵極驅動器 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 168K |
| 代理商： | RIC7113E4 |
Features
Total dose capability to 100K Rad (Si)
Floating channel designed for bootstrap operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Hermetically Sealed
Lightweight
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
R
thJA
T
J
T
S
T
L
Parameter
Min.
-0.5
—
V
S
- 0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
—
—
—
-55
-55
—
Max.
V
S
+ 20
400
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
125
125
150
300
Units
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ T
A
￡
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
V
V/ns
W
°C/W
°C
0.42 (typical)
g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board
mounted and still air conditions.
Description
The RIC7113E4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
RIC7113E4
5/3/2001
www.irf.com
1
PD-93920A
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