| 型號 | 廠商 | 描述 |
| rhru50120 2 3 4 |
INTERSIL CORP | 50A, 1200V Hyperfast Diode |
| rhru5040 2 3 4 |
HARRIS SEMICONDUCTOR | 50A, 400V - 600V Hyperfast Diodes |
| rhru5050 2 3 4 |
INTERSIL CORP | 50A, 400V - 600V Hyperfast Diodes |
| rhru5060 2 3 4 |
INTERSIL CORP | 50A, 400V - 600V Hyperfast Diodes |
| rhru75100 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 700V - 1000V Hyperfast Diodes |
| rhru7570 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 700V - 1000V Hyperfast Diodes |
| rhru7580 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 700V - 1000V Hyperfast Diodes |
| rhru7590 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 700V - 1000V Hyperfast Diodes |
| rhru75120 2 3 |
INTERSIL CORP | 75A, 1200V Hyperfast Diode |
| rhru7540 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 400V - 600V Hyperfast Diodes |
| rhru7550 2 3 4 |
HARRIS SEMICONDUCTOR | 75A, 400V - 600V Hyperfast Diodes |
| rhru7560 2 3 4 |
INTERSIL CORP | 75A, 400V - 600V Hyperfast Diodes |
| ric7113e4 2 3 4 5 6 7 8 9 |
International Rectifier | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER |
| ric7113a4 2 3 4 5 6 7 8 9 |
International Rectifier | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER |
| ric7113 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
International Rectifier | Total Ionizing Dose Test Report |
| rkbpc15005 |
FUJI ELECTRIC CO LTD | 15 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc25005 |
FUJI ELECTRIC CO LTD | 25 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc35005 |
FUJI ELECTRIC CO LTD | 35 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc6005 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc601 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc602 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc604 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc606 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc608 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc610 |
FUJI ELECTRIC CO LTD | 6 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc8005 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc801 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc802 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc804 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc806 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc808 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rkbpc810 |
FUJI ELECTRIC CO LTD | 8 AMP FAST RECOVERY BRIDGE RECTIFIER |
| rl622-150k 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Microsemi Corporation | EVALUATION KIT |
| rlf7030t-1r0n64 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
National Semiconductor Corporation | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| rlf7030t-1r5n6r1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
National Semiconductor Corporation | PCB COPPER CLAD 12 X 18 2 SIDE |
| rlf12560t-2r7n110 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
National Semiconductor Corporation | SOLID TANTALUM RoHS Compliant: Yes |
| rlf7030t-3r3m4r1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
National Semiconductor Corporation | PCB COPPER CLAD 18 X 18 2 SIDE |
| rlf7030t-4r7m3r4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
National Semiconductor Corporation | PCB COPPER CLAD 3 X 4.5 2 SIDE |
| rlp03n06cle 2 3 4 5 6 7 8 9 |
HARRIS SEMICONDUCTOR | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| rld03n06cle 2 3 4 5 6 7 8 9 |
HARRIS SEMICONDUCTOR | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| rld03n06clesm 2 3 4 5 6 7 8 9 |
INTERSIL CORP | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| rlp03n06cle 2 3 4 5 6 7 8 9 10 11 12 13 |
FAIRCHILD SEMICONDUCTOR CORP | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| rld03n06cle 2 3 4 5 6 7 8 9 10 11 12 13 |
FAIRCHILD SEMICONDUCTOR CORP | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| rld03n06clesm 2 3 4 5 6 7 8 9 10 11 12 13 |
FAIRCHILD SEMICONDUCTOR CORP | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| rlp1n06cle 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應管) |
| rlp1n08le 2 3 4 5 6 7 8 9 |
HARRIS SEMICONDUCTOR | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
| rm100d2z-40 2 3 |
Mitsubishi Electric Corporation | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| rm100dz-2h 2 3 |
Mitsubishi Electric Corporation | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| rm100cz-24 2 3 |
Mitsubishi Electric Corporation | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| rm100 2 3 |
Mitsubishi Electric Corporation | HIGH SPEED SWITCHING USE INSULATED TYPE |