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參數資料
| 型號： | RHRU7590 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 75A, 700V - 1000V Hyperfast Diodes |
| 中文描述： | 75 A, 900 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | RHRU7590 |
1
RHRU7570, RHRU7580, RHRU7590, RHRU75100
75A, 700V - 1000V Hyperfast Diodes
RHRU7570,
(TA49068) are hyperfast diodes with soft recovery character-
istics (t
RR
< 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
RHRU7580, RHRU7590 and RHRU75100
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU7570
TO-218
RHRU7570
RHRU7580
TO-218
RHRU7580
RHRU7590
TO-218
RHRU7590
RHRU75100
TO-218
RHRU75100
NOTE: When ordering, use the entire part number.
ANODE
CATHODE
(FLANGE)
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU7570
700
700
700
75
RHRU7580
800
800
800
75
RHRU7590
900
900
900
75
RHRU75100 UNITS
1000
1000
1000
75
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= +52
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . E
AVL
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
V
V
V
A
150
150
150
150
A
750
750
750
750
A
190
50
190
50
190
50
190
50
W
mj
o
C
-65 to +175
-65 to +175
-65 to +175
Data Sheet
April 1995
File Number
3925.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
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