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參數(shù)資料
| 型號： | RLP1N08LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
| 中文描述： | 1.5 A, 80 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 53K |
| 代理商： | RLP1N08LE |
6-435
File Number
2252.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RLP1N08LE
1A, 80V 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. “Logic level”
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Features
1A, 80V
r
DS(ON)
= 0.750
I
LIMIT
at 150
o
C = 1.5A Maximum
Built-in Current Limiting
ESD Protected
Controlled Switching Limits EMI and RFI
Specified for 150
o
C Operation
Temperature Compensated Spice Model Provided
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N08LE
TO-220AB
L1N08LE
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
April 1999
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