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參數(shù)資料
| 型號(hào)： | RMM2080 |
| 廠商： | RAYTHEON SEMICONDUCTOR |
| 元件分類： | 衰減器 |
| 英文描述： | 2-18 GHz Wideband Variable-Gain Driver Amplifier |
| 中文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 201K |
| 代理商： | RMM2080 |
2004 Fairchild Semiconductor Corporation
May 2004
RMM2080 Rev. C
R
RMM2080
2-18 GHz Wideband Variable-Gain Driver Amplifier
General Description
The Fairchild Semiconductor’s RMM2080 GaAs MMIC
device is a three-stage distributed medium-power amplifier
with gain control capability. The circuit incorporates ion-
implanted, 0.5-μm gate MESFET devices fabricated on a
semi-insulating GaAs substrate. The first two stages are 4-
cell distributed amplifiers utilizing dual-gate FETs for
improved gain per stage and to facilitate gain control
(4x125μm & 4x250μm). The third stage is a 3-cell
distributed dual-gate FET amplifier designed for high output
power and efficiency (3x500μm). The RMM2080 amplifier
is designed for interconnection with microstrip transmission
media using fully automatic assembly techniques.
Features
2–18GHz Bandwidth
24dB Typical Gain
±2dB Gain Flatness
20dBm Output Power Typical
Three Stages of Distributed Amplification
Gain Control of up to 70dB range
Dual-Gate Ion-Implanted 0.5μm FETs
Chip Size: 4.14mm x 3.22mm x 0.1mm
Absolute Ratings
Symbol
Parameter
Ratings
+8
-2
10
400
+8
-30 to +85
-55 to +125
22
Units
V
V
V
mA
dBm
°C
°C
°C/W
Vd
Vg
Vgd
Id
P
IN
T
CASE
T
STORAGE
R
JC
Positive Drain DC Voltage (+7V Typ)
Negative DC Voltage
Simultaneous (Vd-Vg)
Positive DC Current
RF Input Power (from 50
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
(CW)
source)
Device
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