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參數資料
型號: S1DB-13
廠商: DIODES INC
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMB, 2 PIN
文件頁數: 1/2頁
文件大小: 82K
代理商: S1DB-13
DS16003 Rev. 13 - 2
1 of 2
S1A/B - S1M/B
www.diodes.com
Diodes Incorporated
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Available in Lead Free Finish/RoHS Compliant Version
(Note 3)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S1
A/AB
S1
B/BB
S1
D/DB
S1
G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TT = 100
°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
1.1
V
Peak Reverse Leakage Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 125
°C
IRM
5.0
100
mA
Maximum Reverse Recovery Time (Note 4)
trr
2.0
ms
Typical Total Capacitance
(Note 1)
CT
10
rF
Typical Thermal Resistance, Junction to Terminal (Note 2)
RqJT
30
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
Mechanical Data
Case: SMA/SMB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish).
Please See Ordering Information, Note 5, on Page 2
Polarity: Cathode Band or Cathode Notch
Marking: Type Number, See Page 2
Ordering Information: See Page 2
SMA Weight: 0.064 grams (approximate)
SMB Weight: 0.093 grams (approximate)
Dim
SMA
SMB
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.30
2.00
2.40
All Dimensions in mm
A
B
C
D
G
H
E
J
相關PDF資料
PDF描述
S1KB-13 1 A, 800 V, SILICON, SIGNAL DIODE
S1BB-7 1 A, 100 V, SILICON, SIGNAL DIODE
S1GB-7 1 A, 400 V, SILICON, SIGNAL DIODE
S1MB-7 1 A, 1000 V, SILICON, SIGNAL DIODE
S1J-7 1 A, 600 V, SILICON, SIGNAL DIODE
相關代理商/技術參數
參數描述
S1DB-13-F 功能描述:整流器 200V 1A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1D-E3/2GT 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1D-E3/51T 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1D-E3/5AT 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1D-E3/61T 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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