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參數資料
型號: S25FL004D0LMAI013
廠商: SPANSION LLC
元件分類: PROM
英文描述: 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
中文描述: 4M X 1 FLASH 3V PROM, PDSO8
封裝: 0.208 INCH, SOP-8
文件頁數: 7/36頁
文件大小: 724K
代理商: S25FL004D0LMAI013
June 28, 2004 S25FL004D_00A0
S25FL Family (Serial Peripheral Interface) S25FL004D
15
Ad va nc e
In forma t i o n
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be
read. The Status Register may be read at any time, even while a Program, Erase,
or Write Status Register cycle is in progress. When one of these cycles is in
progress, it is recommended to check the Write In Progress (WIP) bit before
sending a new instruction to the device. It is also possible to read the Status Reg-
ister continuously, as shown in Figure 6.
Figure 6. Read Status Register (RDSR) Instruction Sequence
Figure 7. Status Register Format
The status and control bits of the Status Register are as follows:
SRWD bit: The Status Register Write Disable (SRWD) bit is operated in conjunc-
tion with the Write Protect (W#) signal. The Status Register Write Disable
(SRWD) bit and Write Protect (W#) signal allow the device to be put in the Hard-
ware Protected mode (when the Status Register Write Disable (SRWD) bit is set
to 1, and Write Protect (W#) is driven Low). In this mode, the non-volatile bits
of the Status Register (SRWD, BP2, BP1, BP0) become read-only bits and the
Write Status Register (WRSR) instruction is no longer accepted for execution.
BP2, BP1, BP0 bits: The Block Protect (BP2, BP1, BP0) bits are non-volatile.
They define the size of the area to be software protected against Program and
Erase instructions. These bits are written with the Write Status Register (WRSR)
instruction. When one or both of the Block Protect (BP2, BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table 1) becomes protected against
Page Program (PP), and Sector Erase (SE) instructions. The Block Protect (BP2,
BP1, BP0) bits can be written provided that the Hardware Protected mode has not
Instruction
High Impedance
MSB
Status Register Out
0
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
7 6
5 4 3 2 10
7 6 5 4 3 2 1 0 7
SO
SI
SCK
CS#
Status Register
Write Disable
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
SRWD
0
BP2
BP1
BP0
WEL
WIP
b7
b0
相關PDF資料
PDF描述
S25FL004D0LMFI011 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LMFI013 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNFI011 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNFI013 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
相關代理商/技術參數
參數描述
S25FL004D0LMFI011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LMFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNAI011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
S25FL004D0LNFI011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface
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