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參數資料
| 型號： | S29CL032J1MFAN120 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件頁數： | 23/78頁 |
| 文件大小： | 1825K |
| 代理商： | S29CL032J1MFAN120 |
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Publication Number S29CD-J_CL-J_00
Revision B Amendment 1 Issue Date September 27, 2006
General Description
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These
burst-mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two
separate banks, using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz
(16 Mb), and use a single VCC of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today's
demanding automotive applications.
Distinctive Characteristics
Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for
read/program/erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero
latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
— CD016J & CL016J: Eight 2K Double word, Thirty-two
16K Double word, and Eight 2K Double Word sectors
— CD032J & CL032J: Eight 2K Double word, Sixty-two
16K Double Word, and Eight 2K Double Word sectors
VersatileI/O control (1.65V to 3.6V)
Programmable Burst Interface
— Linear for 2, 4, and 8 double word burst with or
without wrap around
Secured Silicon Sector that can be either factory or
customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per
sector (typical)
Command set compatible with JEDEC (JC42.4)
standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced
Sector Protection
Unlock Bypass program command to reduce
programming time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase
operation completion
Hardware (WP#) protection of two outermost
sectors in the large bank
Ready/Busy (RY/BY#) output indicates data
available to system
Suspend and Resume commands for Program and
Erase Operation
Offered Packages
—80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option available
— Known Good Die
Performance Characteristics
S29CD-J & S29CL-J Flash Family
S29CD032J, S29CD016J, S29CL032J, S29CL016J
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only
Simultaneous Read/Write, Dual Boot, Burst Mode
Flash Memory with VersatileI/O
Data Sheet
PRELIMINARY
Read Access Times
Speed Option (MHz)
75 (32Mb only)
66
56
40
Max Asynch. Access Time, ns (tACC)
48
54
Max Synch. Burst Access, ns (tBACC)
7.5 (FBGA)
8
Min Initial Clock Delay (clock cycles)
54
4
3
Max CE# Access Time, ns (tCE)
52
54
Max OE# Access time, ns (tOE)
20
Current Consumption (Max values)
Continuous Burst Read @ 75MHz
90 mA
Program
50 mA
Erase
50 mA
Standby Mode
60 A
Typical Program and Erase Times
Double Word Programming
18 s
Sector Erase
1.0 s
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| S29GL032A10TAIR10 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
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| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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