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參數(shù)資料
| 型號(hào)： | S29GL032A10TAIR13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 86/95頁(yè) |
| 文件大?。?/td> | 3585K |
| 代理商： | S29GL032A10TAIR13 |
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May 21, 2008 S29GL-A_00_A12
S29GL-A
87
Data
She e t
17. Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90
°C; Worst case V
CC, 100,000 cycles.
3. Effective programming time (typ) is 15
μs (per word), 7.5 μs (per byte).
4. Effective accelerated programming time (typ) is 12.5
μs (per word), 6.3 μs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 10.2 on page 61
and Table 10.1 on page 62 for further information on command definitions.
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming prior
to erasure
Chip Erase Time
S29GL016A
17.5
35
S29GL032A
32
64
S29GL064A
64
128
240
s
Excludes system
level overhead
Total Accelerated Effective Write Buffer Program Time (Notes 4, 5)
200
Chip Program Time
S29GL016A
16
sec
S29GL032A
31.5
S29GL064A
63
Table 17.1 TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
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| S29GL032A10TAIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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