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參數(shù)資料
型號: S29GL032A90TAIR22
廠商: SPANSION LLC
元件分類: PROM
英文描述: 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數(shù): 15/95頁
文件大小: 3585K
代理商: S29GL032A90TAIR22
22
S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
7.
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is a latch used to store the commands, along with the address and data information needed to
execute the command. The contents of the register serve as inputs to the internal state machine. The state
machine outputs dictate the function of the device. Table 7.1 lists the device bus operations, the inputs and
control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Legend
L = Logic Low = VIL, H = Logic High = VIH, X = Don’t Care, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1. Addresses are Amax:A0 in word mode; Amax: A-1 in byte mode. Sector addresses are Amax:A15 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector Group Protection
3. If WP# = VIL, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors are protected (for boot
sector devices). If WP# = VIH, the first or last sector, or the two outer boot sectors are protected or unprotected as determined by the
method described in Sector Group Protection and Unprotection on page 41. All sectors are unprotected when shipped from the factory
(The Secured Silicon Sector may be factory protected depending on version ordered.)
4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 10.3 on page 64).
Table 7.1 Device Bus Operations
Operation
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
DQ0–
DQ7
DQ8–DQ15
BYTE#
= VIH
BYTE#
= VIL
Read
L
H
X
AIN
DOUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write (Program/Erase)
L
H
L
H
XAIN
Accelerated Program
L
H
L
H
VHH
AIN
Standby
VCC ± 0.3 V
X
VCC ±
0.3 V
X
H
X
High-Z
Output Disable
L
H
X
High-Z
Reset
X
L
X
High-Z
Sector Group Protect
LH
L
VID
HX
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
XX
Sector Group Unprotect
LH
L
VID
HX
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
XX
Temporary Sector Group
Unprotect
XX
X
VID
HX
AIN
High-Z
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S29GL032M10BFIR20 T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
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