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參數資料
型號： S29GL032M10BFIR12
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64
文件頁數： 17/158頁
文件大小： 4695K
代理商： S29GL032M10BFIR12
August 4, 2004 S29GLxxxM_00_B1_E
S29GLxxxM MirrorBitTM Flash Family
113
Da ta shee t
Command Definitions
Table 35. Command Definitions (x16 Mode, BYTE# = VIH)
Command
Sequence
(Note 1)
Cyc
le
s
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data Addr Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Au
to
se
le
ct
(
N
ot
e
8
)
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 9)
4
555
AA
2AA
55
555
90
X01
227E
X0E
X0F
SecSi‰ Sector Factory Protect
(Note 10)
4
555
AA
2AA
55
555
90
X03
(Note 10)
Sector Group Protect Verify (Note
12)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
3
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 15)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 16)
1
XXX
B0
Program/Erase Resume (Note 17)
1
XXX
30
CFI Query (Note 18)
1
55
98
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are
555 or 2AA as shown in table, address bits above A11 and data
bits above DQ7 are don’t care.
5. No unlock or command cycles required when device is in read
mode.
6. Reset command is required to return to read mode (or to erase-
suspend-read mode if previously in Erase Suspend) when device
is in autoselect mode, or if DQ5 goes high while device is
providing status information.
7. Fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD
and WC. See Autoselect Command Sequence section for more
information.
8. Device ID must be read in three cycles.
9. If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
address sector, data is 88h for factory locked and 08h for not
factor locked.
10. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
11. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21, including “Program Buffer to
Flash” command.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
13. Unlock Bypass command is required prior to Unlock Bypass
Program command.
14. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
15. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
16. Erase Resume command is valid only during Erase Suspend
mode.
17. Command is valid when device is ready to read array data or
when device is in autoselect mode.
18. Refer to Table 18, AutoSelect Codes for individual Device IDs
per device density and model number.
相關PDF資料
PDF描述
S29GL032M10BFIR13 MirrorBit Flash Family
S29GL032M10BFIR30 T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
S29GL032M10FAIR22 MirrorBit Flash Family
S29GL032M10FAIR23 MirrorBit Flash Family
S29GL032M10FAIR30 MirrorBit Flash Family
相關代理商/技術參數
參數描述
S29GL032M10BFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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