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參數資料
| 型號： | S6785G |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE |
| 中文描述： | 東芝高速硅平面型晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 107K |
| 代理商： | S6785G |
S6785G
2001-07-10
1
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
S6785G
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off
State Voltage
and Repetitive Peak Reverse Voltage
V
DRM
V
RRM
400
V
Non
Repetitive Peak Reverse
Voltage (Non
Repetitive <5ms,
T
j
= 0~125°C)
V
RSM
500
V
Average On
State Current
(Half Sine Waveform)
I
T (AV)
3
A
R.M.S On
State Current
I
T (RMS)
4.7
A
60 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
66 (60Hz)
A
I
2
t Limit Value
I
2
t
18
A
2
s
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Voltage
V
FGM
10
V
Peak Reverse Gate Voltage
V
RGM
6
V
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
―
―
13
10H1B
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