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參數資料
| 型號： | S7478-01 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 122K |
| 代理商： | S7478-01 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S7478 series
Cat. No. KPIN1034E02
Mar. 2001 DN
s Spectral response
KPINB0190EA
s Dark current vs. reverse voltage
KPINB0191EA
s Terminal capacitance vs. reverse voltage
KPINB0192EA
200
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
400
600
800
1000
1200
(Typ. Ta=25 C)
S7478
S7478-01
QE=100 %
0.01
REVERSE VOLTAGE (V)
DARK
CURRENT
10 pA
100 pA
1 nA
0.1
1
10
100
(Typ. Ta=25 C)
0.1
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
1 pF
100 pF
10 pF
1 nF
1
10
100
(Typ. Ta=25 C)
s Dimensional outline (unit: mm)
9.0*
(6
×
)
0.4
1.5 ± 0.4
INDEX
(C0.7)
0.7 ± 0.3
0.2
(2 ×) 10
0.7 ± 0.3
0.1
±
0.1
12.0 ± 0.3
2.54
9.6*
0.55
0.85
1.5
(2
×
)10
(2
×
)10
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
5 × 5
ANODE
CATHODE
NC
CATHODE
NC
Tolerance unless otherwise noted: ±0.1
Chip position accuracy
with respect to the
package dimensions marked *
X, Y
≤ ±0.2
θ ≤ ±2
KPINA0062EA
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