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參數資料
| 型號： | SAM50UFTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.4 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 114K |
| 代理商： | SAM50UFTXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information
1/
SAM _ _
_ _
_ _ __
L Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Package
___ = Axial
SMS = Surface Mount Square Tab
L Recovery Time
F = Fast Recovery
UF = Ultra Fast Recovery
L Voltage
50 = 5000
60 = 6000
70 = 7000
80 = 8000
90 = 9000
SAM50F thru SAM90F
and
SAM50UF thru SAM90UF
0.5 Amp
5000-9000 VOLTS
60-150 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Fast Recovery: 60-150 nsec Maximum
PIV to 9000 Volts
Hermetically Sealed
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
TX, TXV, and Space Level Screening Available
2/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse
Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
I0
IR @ PIV
VF
IFSM
tRR
CJ
θJL/θJE
Units
mA
μA
Volts
Amps
nsec
pF
Conditions
Volts
25°C
100°C
25°C
100°C
25°C
VR = 100V
fT = 1MHZ
(L=3/8”)
°C/W
SAM50F
5000
500
300
1.0
15
13
25
150
10
18
SAM60F
6000
500
300
1.0
15
13
25
150
10
18
SAM70F
7000
500
300
1.0
15
13
25
150
10
18
SAM80F
8000
500
300
1.0
15
13
25
150
10
18
SAM90F
9000
500
300
1.0
15
13
25
150
10
18
SAM50UF
5000
400
250
1.0
15
13
25
60
10
21
SAM60UF
6000
400
250
1.0
15
13
25
60
10
21
SAM70UF
7000
400
250
1.0
15
13
25
60
10
21
SAM80UF
8000
400
250
1.0
15
13
25
60
10
21
SAM90UF
9000
400
250
1.0
15
13
25
60
10
21
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or
immersion in a suitable dielectric material.
4/ Max. forward voltage measured with instantaneous forward pulse of
300sec minimum.
5/ Max. end tab temp. for soldering is 250°C for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=.5mA, IR=100mA, IRR=25mA,
TA=25°C.
Axial
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0031D
DOC
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