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參數資料
型號: SBAS21LT1
廠商: ON SEMICONDUCTOR
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.2 A, 250 V, SILICON, SIGNAL DIODE, TO-236AB
封裝: CASE 318-08, TO-236, 3 PIN
文件頁數: 1/6頁
文件大小: 99K
代理商: SBAS21LT1
Semiconductor Components Industries, LLC, 2008
October, 2008 Rev. 11
1
Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
120
200
250
Vdc
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
120
200
250
Vdc
Continuous Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
Junction and Storage Temperature
Range
TJ, Tstg
55 to
+150
°C
Power Dissipation (Note 1)
PD
385
mW
Electrostatic Discharge
ESD
HM < 500
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.
HIGH VOLTAGE
SWITCHING DIODE
Preferred devices are recommended choices for future use
and best overall value.
5
CATHODE
1
ANODE
MARKING DIAGRAMS
http://onsemi.com
3
CATHODE
1
ANODE
4
CATHODE
3
ANODE
SOT23 (TO236)
CASE 318
STYLE 8
SC88A (SOT353)
CASE 419A
SOT23
SC88A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
2
3
1
Jx M G
G
x
= P, R, or S
P
= BAS19LT1
R
= BAS20LT1
S
= BAS21LT1 or BAS21DW5T1
M
= Date Code
G
= PbFree Package
2
3
Jx M G
G
1
3
2
1
4
5
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
(Note: Microdot may be in either location)
相關PDF資料
PDF描述
SBAV199LT1 0.215 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
SBF1060 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
SBF2030CT 20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
SBF2040CT 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
SBG1630CT 16 A, 30 V, SILICON, RECTIFIER DIODE
相關代理商/技術參數
參數描述
SBAS21LT1G 功能描述:二極管 - 通用,功率,開關 SS SWCH DIO SPCL RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SBAS21LT3 制造商:ON Semiconductor 功能描述:
SBAS21LT3G 功能描述:二極管 - 通用,功率,開關 SS SWCH DIO SPCL RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SBAS40-04LT1G 功能描述:肖特基二極管與整流器 SS SHKY DIO 40V TR RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SBAS40-06LT1 制造商:Rochester Electronics LLC 功能描述:- Bulk
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