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參數資料
| 型號： | SBAV199LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.215 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 51K |
| 代理商： | SBAV199LT1 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 5
1
Publication Order Number:
BAV199LT1/D
BAV199LT1
Preferred Device
Dual Series Switching
Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
Vdc
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
IF(AV)
715
mAdc
Repetitive Peak Forward Current
IFRM
450
mAdc
NonRepetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT23
STYLE 11
BAV199LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
JY M
G
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV199LT1G
SOT23
(PbFree)
3000/Tape & Reel
JY = Specific Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SBAV199LT1G | 功能描述:二極管 - 通用，功率，開關 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAV199LT3G | 功能描述:二極管 - 通用，功率，開關 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SBAV3482APZ-TR | 制造商:Texas Instruments 功能描述: |
| SBAV55BBPGEQR | 制造商:Texas Instruments 功能描述: |
| SBAV70LT1G | 功能描述:DIODE SWITCH DUAL CC 70V SOT-23 RoHS:是 類別:分離式半導體產品 >> 二極管，整流器 - 陣列 系列:- 其它有關文件:STTH10LCD06C View All Specifications 標準包裝:1,000 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復時間(trr):50ns 二極管類型:標準 速度:快速恢復 = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應商設備封裝:D2PAK 包裝:帶卷 (TR) 產品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
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