- 您現在的位置：買賣IC網 > PDF目錄31063 > SBE804 (SANYO SEMICONDUCTOR CO LTD) 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE PDF資料下載
參數資料
| 型號： | SBE804 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | CPH5, 5 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 20K |
| 代理商： | SBE804 |
SBE804
No.7290-1/3
Features
Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=10ns).
Composite type with 2 diodes contained in the CPH
package currently in use, improving the mounting
efficiency greatly.
The chips incorporated are both equivalent to
the SB02-03C.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
200
mA
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
2
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=50A30
V
Forward Voltage
VF
IF=200mA
0.55
V
Reverse Current
IR
VR=15V
15
A
Interterminal Capacitance
C
VR=10V, f=1MHz
6.3
pF
Reverse Recovery Time
trr
IF=IR=(--)10mA, see specified Test Circuit.
10
ns
Thermal Resistance
Rth(j-a)
300
°C / W
Note : The specifications shown above are for each individual diode.
Marking : SG
Ordering number : ENN7290
SBE804
30V, 200mA Rectifier
Package Dimensions
unit : mm
1294
[SBE804]
O1002 TS IM TA-3611
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Silicon Schottky Barrier Diode
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
1.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
12
3
4
5
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相關PDF資料 |
PDF描述 |
|---|---|
| SBE805 | 0.5 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| SBE806 | 0.1 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| SBE806 | 0.1 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| SBF1060CT2 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBF1050CT2 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SBE805 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30V, 500mA Rectifier |
| SBE805-S-TL-E | 功能描述:肖特基二極管與整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE805-S-TL-W | 制造商:ON Semiconductor 功能描述:SBD PARALLEL 0.5A 30V - Tape and Reel |
| SBE805-TL-E | 功能描述:肖特基二極管與整流器 SBD DUAL PARALLEL 0.5A30V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE805-TL-W | 制造商:ON Semiconductor 功能描述:SBD PARALLEL 0.5A 30V - Tape and Reel |
發布緊急采購，3分鐘左右您將得到回復。