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參數(shù)資料
| 型號： | SBE806 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.1 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | CPH5, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 21K |
| 代理商： | SBE806 |
SBE806
No.7292-1/3
Features
Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=10ns).
Composite type with 2 diodes contained in the CPH
package currently in use, improving the mounting
efficiency greatly.
The chips incorporated are both equivalent to
the SB01-05CP.
Specifications
Absolute Maximum Ratings at Ta=25
°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
50
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
55
V
Average Output Current
IO
100
mA
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
2
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C (Value per element)
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=50A50
V
Forward Voltage
VF
IF=100mA
0.55
V
Reverse Current
IR
VR=25V
15
A
Interterminal Capacitance
C
VR=10V, f=1MHz
4.4
pF
Reverse Recovery Time
trr
IF=IR=10mA, see specified Test Circuit.
10
ns
Thermal Resistance
Rth(j-a)
300
°C / W
Marking : SF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7292
SBE806
50V, 100mA Rectifier
Package Dimensions
unit : mm
1294
[SBE806]
O1002 TS IM TA-3613
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Schottky Barrier Diode
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
1.6
0.6
2.8
0.2
2.9
0.05
0.4
0.95
0.2
0.9
0.7
0.15
0.4
12
3
4
5
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| SBE806-TL-E | 功能描述:DIODE SCHOTTKY 50V 0.1A CPH5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 二極管，整流器 - 陣列 系列:- 其它有關(guān)文件:STTH10LCD06C View All Specifications 標準包裝:1,000 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復(fù)時間(trr):50ns 二極管類型:標準 速度:快速恢復(fù) = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應(yīng)商設(shè)備封裝:D2PAK 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
| SBE807 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Schottky Barrier Diode 30V, 1.0A Rectifier |
| SBE807-S-TL-E | 功能描述:肖特基二極管與整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBE807-S-TL-W | 制造商:ON Semiconductor 功能描述:SBD DUAL PARALLEL 1A 30V - Tape and Reel |
| SBE807-TL-E | 功能描述:整流器 SBD DUAL PARALLEL 1A 30V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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