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參數資料
| 型號： | SD1441 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | SD1441 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 100 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 5.0 mA
I
CBO
V
CB
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
C
OB
V
CB
= 12.5 V f = 1.0 MHz
P
G
η
C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
10
5.0
5.5
60
UNITS
V
V
V
mA
---
pF
dB
%
5.0
430
V
CE
= 12.5 V P
OUT
= 150 W f = 175 MHz
NPN SILICON RF POWER TRANSISTOR
SD1441
DESCRIPTION:
The
ASI SD1441
is a12.5 V epitaxial silicon
NPN plannar transistor. Designed primarily for
VHF communication in the 175 MHz frequency.
FEATURES:
175 MHz 12.5 V
P
G
= 5.0 dB at 150 W/175 MHz
Omnigold
Metalization System
Common Emitter configuration
MAXIMUM RATINGS
I
C
22 A
V
CBO
36 V
V
CEO
18 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
350 W @ T
C
= 25 °C
-65 °C to +200 °
C
T
J
T
STG
-65 °C to +150 °C
θ
JC
0.5 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collecttor 2 = Base 3&4 = Emitter
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.220 / 5.59
.007 / 0.18
.510 / 12.95
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
1
2
3
4
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