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參數(shù)資料
| 型號： | SDB06S60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Silicon Carbide Schottky Diode |
| 中文描述： | 碳化硅肖特基二極管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 261K |
| 代理商： | SDB06S60 |
2004-03-23
Rev. 2.0
Page 1
SDP06S60, SDB06S60
SDT06S60
thinQ!
SiC Schottky Diode
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 1200W
1)
No forward recovery
Product Summary
V
RRM
Q
c
I
F
600
V
21
nC
6
A
P-TO220-2-2.
P-TO220-3-1.
P-TO220-3.SMD
Pin 1
n.c.
Pin 2
C
Type
SDP06S60
Package
P-TO220-3-1.
Ordering Code
Q67040-S4371
SDB06S60
P-TO220-3.SMD Q67040-S4370
SDT06S60
P-TO220-2-2.
Q67040-S4446
Pin 3
A
Marking
D06S60
D06S60
D06S60
n.c.
C
C
A
A
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
6
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
8.4
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
21.5
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
28
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
I
FMAX
60
∫
i
2
d
t
V
RRM
V
RSM
P
tot
T
j ,
T
stg
2.3
A2s
V
600
Surge peak reverse voltage
600
57.6
Power dissipation
,
T
C
=25°C
Operating and storage temperature
W
-55... +175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| SDB06S60_05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| SDB06S60-E3045A | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 6A 3-Pin(2+Tab) D2PAK T/R |
| SDB06S60NT | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 6A 3-Pin(3+Tab) TO-220 T/R |
| SDB06S60T | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 6A 3-Pin(2+Tab) D2PAK T/R |
| SDB06S60XT | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 6A 3-Pin(2+Tab) D2PAK T/R |
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