欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SE10PB-E3/85A
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA
封裝: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件頁數: 1/4頁
文件大小: 99K
代理商: SE10PB-E3/85A
New Product
SE10PB thru SE10PJ
Vishay General Semiconductor
Document Number: 89024
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount ESD Capability Rectifiers
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Oxide planar chip junction
Low forward voltage drop
Typical IR less than 0.1 A
ESD capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection
in
both
consumer
and
automotive
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V to 600 V
IR
5 A
VF at IF = 1.0 A
0.86 V
TJ max.
175 °C
DO-220AA (SMP)
eSMPTM Series
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
SE10PB
SE10PD
SE10PG
SE10PJ
UNIT
Device marking code
10B
10D
10G
10J
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
Average forward current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
25
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward voltage (1)
IF = 1.0 A,
TJ = 25 °C
TJ = 125 °C
VF
0.960
0.860
1.05
0.95
V
Maximum reverse current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
-
4.8
5.0
50
A
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
Typical junction capacitance time
4.0 V, 1 MHz
CJ
7.0
-
pF
相關PDF資料
PDF描述
SMBJ33AHE3/52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ45HE3/52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ60CAHE3/5B 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ7.0HE3/5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ78CAHE3/52 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相關代理商/技術參數
參數描述
SE10PBHM3/84A 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
SE10PBHM3/85A 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
SE10PB-M3/84A 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
SE10PB-M3/85A 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
SE10PD 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers
主站蜘蛛池模板: 托里县| 垣曲县| 手机| 聂荣县| 龙海市| 武平县| 修武县| 龙南县| 石台县| 托里县| 句容市| 乌恰县| 凤山市| 龙南县| 黔江区| 克拉玛依市| 德阳市| 四平市| 郯城县| 榆林市| 昌乐县| 札达县| 报价| 区。| 乐至县| 雷波县| 孝昌县| 理塘县| 韶关市| 三亚市| 永顺县| 泰和县| 如皋市| 农安县| 乌什县| 泸水县| 万载县| 元氏县| 布拖县| 嘉荫县| 曲松县|