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參數資料
| 型號： | SE10PB-E3/85A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | SE10PB-E3/85A |
New Product
SE10PB thru SE10PJ
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89024
Revision: 26-May-08
2
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
Notes:
(1) Immunity to IEC-61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
SE10PB
SE10PD
SE10PG
SE10PJ
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
105
25
30
°C/W
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 k
Ω
VC
H3B
> 8 kV
AEC Q101-002
Machine model (contact mode)
C = 200 pF, R = 0
Ω
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 150 pF, R = 1.5 k
Ω
3B
> 8 kV
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0
Ω
C
> 400 V
IEC-61000-4-2 (2)
Human body model (contact mode)
C = 150 pF, R = 150
Ω
4> 8 kV
Human body model (air-discharge mode) (1)
C = 150 pF, R = 150
Ω
4
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SE10PJ-E3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SE10PJ-E3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
150
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
T
L Measured
at the Cathode Band Terminal
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics
0
0.2
0.4
0.6
0.8
1.2
1.0
0
0.2
0.4
0.8
1.0
1.2
0.6
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SE10PBHM3/84A | 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PBHM3/85A | 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PB-M3/84A | 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PB-M3/85A | 功能描述:整流器 100 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers |
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