- 您現在的位置：買賣IC網 > PDF目錄384910 > SFP9640L (FAIRCHILD SEMICONDUCTOR CORP) Advanced Power MOSFET PDF資料下載
參數資料
| 型號： | SFP9640L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 11 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 224K |
| 代理商： | SFP9640L |
SFP9640L
BV
DSS
= -200 V
R
DS(on)
= 0.5
Ω
I
D
= -11 A
-200
-11
-7.5
-44
±
20
806
-11
9.8
-5.0
98
0.78
- 55 to +150
300
1.27
--
62.5
--
0.5
--
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
℃
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
℃
A
℃
TO-220
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitances
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10uA (Max.) @ V
DS
= -200V
Lower R
DS(ON)
: 0.383
(Typ.)
Rev. A
相關PDF資料 |
PDF描述 |
|---|---|
| SFRC9130S.5B | 10 AMP /100 Volts 300 mヘ Radiation Tolerant P-Channel MOSFET |
| SFS2004-59 | 10 AMP 800 VOLTS HIGH VOLTAGE THYRISTOR |
| SFS2329 | 1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER |
| SFS2326 | 1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER |
| SFS2327 | 1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SFP9644 | 功能描述:MOSFET PCh/250V/8.6a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFP9N50 | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| SFP9Z14 | 功能描述:MOSFET P-CH/60V/6.7A/0.5OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFP9Z24 | 功能描述:MOSFET PCh/60V/9.7a/0.28Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFP9Z34 | 功能描述:MOSFET TO-220 P-CH -60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。