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參數資料
| 型號： | SG-531 |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | Half-Size DIP High-Frequency Crystal Oscillator(半尺寸DIP高頻晶體振蕩器) |
| 中文描述： | 半長雙酯高頻晶體振蕩器（半尺寸雙酯高頻晶體振蕩器） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 259K |
| 代理商： | SG-531 |
31
Crystal oscillator
1 OE
4 GND
5 OUT
8 V
DD
NO.
1 OE
7 GND
8 OUT
14 V
DD
NO.
#14
#8
#1
#1
#4
#8
#5
#7
5
2
0
0
6
External dimensions
SG-51 series
Specifications (characteristics)
(Unit: mm)
SG51PH 6052A
32.0000MHz C
E
SG531PTJC
20.0000M
9353B
E
5
2
15.24
0.51
7.62
0.51
0.25
0.25
90
°
to
105
°
90
°
to
105
°
7.62
7.62
19.8 Max.
13.7 Max.
6
SG-531 series
Pin terminal
Pin terminal
FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-51 series
Pin compatible with full-size metal can.
Item
Output frequency range
Power source
voltage
Temperature
range
Soldering condition (lead part)
Frequency stability
Current consumption
Duty
Output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output disable current
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
f/f
0
Iop
t
w
/
t
V
OH
(I
OH
)
V
OL
(I
OL
)
C
L
N
V
IH
V
IL
I
OE
t
TLH
t
THL
t
OSC
fa
S.R.
HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-531 series
Pin compatible with half-size metal can.
Common
Cylindrical AT-cut crystal unit builtin, thus assuring high reliability.
Use of C-MOS IC enables reduction of current consumption.
C-MOS level
TTL level
C-MOS level
TTL level
C-MOS level
TTL level
C-MOS
TTL
SG-51P/531P
SG-51PTJ/531PTJ
Specifications
SG-51PH/531PH
26.0001 MHz to 66.6667 MHz
-0.3
V
to +7.0
V
5.0
V
±0.5
V
-55 °C to +125 °C
-20
°C
to +70
°C (
-40
°C
to +85
°C)
Under +260
°C
within 10 s
B: ± 50
x 10
-6
C: ±100
x 10
-6
23 mA Max.
40 % to 60 %
45 % to 55 %
V
DD
-0.4 V Min.
-400 μA
-0.5 V to +7.0 V
35 mA Max.
—
40 % to 60 %
—
V
DD
-0.4 V Min.
-4 mA
2.4 V Min.
0.4 V Max.
8 mA
—
5 TTL Max.
3.5 V Min.
1.5 V Max.
28 mA Max.
—
5 ns Max.
—
5 ns Max.
16 mA
50 pF Max.
10 TTL Max.
2.0 V Min.
0.8 V Max.
12 mA Max.
4 mA
50 pF Max.
—
2.0 V Min.
0.8 V Max.
20 mA Max.
7 ns Max.
—
7 ns Max.
—
8 ns Max.
8 ns Max.
4 ms Max.
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
Remarks
Don't heat the package at more than +150 °C
B type is possible up to 55.0 MHz
No load condition
1/2 V
DD
level
1.4 V level
C
L
≤
15 pF
I
IH
=1 μA Max. (OE=V
DD
)
I
IL
= -100 μA Min. (OE=GND), PTJ: -500 μA
OE=GND
C-MOS load: 20 %
→
80 % V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 80 %
→
20 % V
DD
TTL load: 2.4 V
→
0.4 V
More than for 1 ms until V
DD
=0 V
→
4.5 V
Time at 4.5 V to be 0 s
Ta=+25 °C, V
DD
=5 V,first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Note: Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is recommended.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
1.0250 MHz to
26.0000 MHz
Please contact us on availability of -40
°
C to +85
°
C
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