
33
Crystal oscillator
Recommended soldering pattern
(Unit: mm)
1.3
3
5
3
1.3
3.8
1 OE
2 GND
3 OUT
4 V
DD
NO.
#1
#2
#4
#3
8
0
9
4
4
0
External dimensions
Specifications (characteristics)
(Unit: mm)
14.0 Max.
5.08
7.62
0.51
20.0000M
9352A
E
SG-615P C
Pin terminal
SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-615 series
High-density mounting-type SMD.
A general-purpose SMD with heat-resisting cylindrical AT-cut
crystal unit and allowing almost the same soldering temperature
as SMD IC.
Cylindrical AT crystal unit builtin, thus assuring high reliability.
Provided with output enable function.
Low current consumption.
Item
Output frequency range
Power source
voltage
Temperature
range
Soldering condition
Frequency stability
Current consumption
Duty
Output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output disable current
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
f/f
0
Iop
t
w
/
t
V
OH
(I
OH
)
V
OL
(I
OL
)
C
L
N
V
IH
V
IL
I
OE
t
TLH
t
THL
t
OSC
fa
S.R.
C-MOS level
TTL level
C-MOS
TTL
C-MOS level
TTL level
C-MOS level
TTL level
SG-615P
SG-615PTJ
Specifications
SG-615PH
1.0250 MHz to 26.0000 MHz
26.0001 MHz to 66.6667 MHz
-0.3 V to +7.0 V
5.0
V
±0.5
V
-55
°
C
to +125
°
C
-20
°
C
to 70
°
C
(-40
°
C
to 85
°
C
)
Twice at under 260
°
C
within 10 s
or under 230
°
C
within 3 min.
B: ±50 x
10
-6
C: ±100 x
10
-6
23 mA Max.
40 % to 60 %
35 mA Max.
—
40 % to 60 %
—
V
DD
-0.4 V Min.
-4 mA
45 % to 55 %
V
DD
-0.4 V Min.
2.4 V Min.
0.4 V Max.
8
mA
—
5 TTL Max.
3.5
V Min.
1.5
V Max.
28
mA Max.
—
5 ns Max.
—
5 ns Max.
16
mA
50 pF Max.
10 TTL Max.
2.0
V Min.
0.8
V Max.
12
mA Max.
4 mA
50 pF Max.
—
2.0
V Min.
0.8
V Max.
20
mA Max.
7 ns Max.
—
7 ns Max.
—
4 ms Max.
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
8 ns Max.
Remarks
Stored as bare product after unpacking
55 MHz Max.(-40
°
C to +85
°
C)
B type is possible up to 55 MHz
No load condition
C-MOS load: 1/2V
DD
TTL load: 1.4 V
C
L
<
15pF
I
IH
=1 μA Max.(OE=V
DD
)
I
IL
=-100 μA Min.(OE=GND) I
IL
=-500 μA Min.(OE=GND) PTJ
OE=GND
C-MOS load: 20
%
→
80
%
V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 80
%
→
20
%
V
DD
TTL load: 2.4 V
→
0.4 V
Time at 4.5 V to be 0 s
Ta= +25
°
C, V
DD
= 5 V, first year
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s
2
x 0.3 ms x
1/2sine wave in 3 directions
Note:
Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is recommended.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
-400 μA