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參數(shù)資料
| 型號： | SG-710STK |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | HIGH-FREQUENCY CRYSTAL OSCILLATOR |
| 中文描述： | 高頻晶體振蕩器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 127K |
| 代理商： | SG-710STK |
37
Crystal oscillator
Recommended soldering pattern
(Unit: mm)
1 OE or ST
2 GND
3 OUT
4 V
DD
NO.
7.5 Max.
7.2 Max.
5.0 Max.
5.2 Max.
PTK/PHK/ECK
W
L
5.08
W
E 40.000
HC724A
1
M
# 3
# 4
# 2
# 1
5.08
1.8
2
4
5.08
1.4
#1
#2
#4
#3
Bottom View
2
External dimensions
Specifications (characteristics)
(Unit: mm)
Pin terminal
L
W
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
Item
Output frequency range
Power source
voltage
Temperature
range
Soldering condition
Frequency stability
Current consumption
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
f/f
0
Iop
I
OE
I
ST
t
w
/t
V
OH
V
OL
N
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
TTL
C-MOS
C-MOS level
TTL level
C-MOS level
TTL level
SG-710PTK
SG-710PHK
Specifications
1.8000 MHz to
80.0000 MHz
SG-710ECK
-0.5 V to +7.0 V
5.0
V
±0.5
V
3.3
V
±0.3
V
-55
°
C to +125
°
C
-10
°
C
to +70
°
C
(-40
°
C
to +85
°
C
)
Twice at under +260
°
C within 10 s
B: ±50 x 10
-6
C: ± 100 x 10
-6
M: ± 100 x 10
-6
40 mA Max.
16 mA Max.
—
45 % to 55 %
45 % to 55 %
40 % to 60 %
2.4 V Min.
V
DD
-0.5 V Min.
0.4 V Max.
10 TTL Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
—
5 ns Max.
—
5 ns Max.
24 mA Max.
12 mA Max.
18 mA Max.
—
10
μA Max.
40 % to 60 %
—
0.9
x
V
DD
Min.
0.1
x
V
DD
Max.
—
15 pF Max.
0.7 x V
DD
Min.
0.3 x V
DD
Max.
6 ns Max.
—
0.5 V Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
5 ns Max.
—
5 ns Max.
6 ns Max.
—
10 ms Max.
±5 x 10
-6
/year Max.
±10 x 10
-6
Max.
Remarks
B,C:-10
°
C to +70
°
C, M:-40
°
C to +85 C
°
No load condition
OE=GND(PTK, PHK)
ST=GND(ECK)
C-MOS load: 1/2 V
DD
level
TTL load: 1.4 V level
I
OH
=-16 mA(PTK,PHK),-2 mA(ECK)
I
OL
= 16 mA(PTK,PHK), 2 mA(ECK)
OE
terminal
(PTK,PHK)
terminal
(ECK)
C-MOS load: 10
%
→
90
%
V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 90
%
→
10
%
V
DD
TTL load: 2.4 V
→
0.4 V
ST
_
Time at minimum operating voltage to be 0 s
Ta= +25
°
C, V
DD
= 5.0 V/3.3 V(ECK)
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s
2
x 0.3 ms x
1/2sine wave in 3 directions
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Ceramic package with 1.5 mm thickness.
Excellent shock resistance and environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enabled function (OE) or
standby function (ST).
1.8000 MHz to
50.0000 MHz
1.8000 MHz to
67.0000 MHz
Please contact us on availability of -40
°
C to +85
°
C
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