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參數資料
| 型號： | SGF-51-5A |
| 廠商： | J S T MFG CO LTD |
| 元件分類： | 終端 |
| 英文描述： | 2 mm2, BRASS, BULLET TERMINAL |
| 文件頁數： | 1/2頁 |
| 文件大小： | 40K |
| 代理商： | SGF-51-5A |
710
Nominal 4.0mm dia. bullet male –––––––––––––––––––––––––––––––––––––––––––––
Qty /
reel
Dimensions mm(in.)
D
(dia.)
Finish
Material
Applicable wire
Standard
Model No.
mm2
AWG #
Insulation
O.D.
mm(in.)
Material
thickness
LS
SGM-51-4
SGM-51T-4
0.5 to 2.0
20 to 14
2.6 to 3.8
(.102 to .150)
Brass
–
Tin-plated
3.55(.140)
15.9(.626)
7.3(.287)
0.5(.020)
5,000
Recognized E60389
Certified LR20812
L
S
D
Nominal 4.0mm dia. bullet female ––––––––––––––––––––––––––––––––––––––––––––
Qty /
reel
Dimensions mm(in.)
D
(dia.)
Finish
Material
Applicable wire
Standard
Model No.
mm2
AWG #
Insulation
O.D.
mm(in.)
Material
thickness
LS
SGF-41-4
SGF-41T-4
0.5 to 1.25
20 to 16
2.6 to 3.5
(.102 to .138)
Brass
–
Tin-plated
3.5(.138)
17.5(.689)
6.4(.252)
0.32(.013)
7,500
Recognized E60389
Certified LR20812
S
L
D
Nominal 5.0mm dia. bullet male –––––––––––––––––––––––––––––––––––––––––––––
Qty /
reel
Dimensions mm(in.)
D
(dia.)
Finish
Material
Applicable wire
Standard
Model No.
mm2
AWG #
Insulation
O.D.
mm(in.)
Material
thickness
LS
SGM-21-5
SGM-21T-5
SGM-51-5
SGM-51T-5
0.3 to 0.75
0.5 to 2.0
22 to 18
20 to 14
1.7 to 2.9
(.067 to .114)
2.6 to 3.8
(.102 to .150)
Brass
–
Tin-plated
–
Tin-plated
3.96(.156)
17.5(.689)
8.7(.343)
0.5(.020)
5,000
Recognized E60389
Certified LR20812
D
S
L
BULLET TERMINAL
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| SGMC34M0NSSP000 | 34 CONTACT(S), MALE, MULTIWAY RACK AND PANEL CONN |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGF-51T-5 | 制造商:JST Manufacturing 功能描述:Bullet Terminal 14-20AWG F 17.5mm Tin Reel |
| SGF5N150UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description |
| SGF5N150UFTU | 功能描述:IGBT 晶體管 1500V / 5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGF80N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGF80N60UFTU | 功能描述:IGBT 晶體管 Discrete Hi-P IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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