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參數資料
型號: SGF15N90D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: General Description
中文描述: 15 A, 900 V, N-CHANNEL IGBT
封裝: TO-3PF, 3 PIN
文件頁數: 1/7頁
文件大小: 365K
代理商: SGF15N90D
2002 Fairchild Semiconductor Corporation
SGF15N90D Rev. A1
IGBT
S
SGF15N90D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.0 V @ I
C
= 15A
High input impedance
Built-in fast recovery diode
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGF15N90D
900
±
25
15
12
30
12
83
33
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes,1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
1.5
2.86
40
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
Home appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens.
C
TO-3PF
G
C
E
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