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參數資料
| 型號： | SGF5N150UF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | General Description |
| 中文描述： | 10 A, 1500 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 292K |
| 代理商： | SGF5N150UF |
2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B
IGBT
S
SGF5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(
IGBT)
provides low conduction and switching losses.
SGF5N150UF is designed for the Switching Power
Supply applications.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 4.7 V @ I
C
= 5A
High Input Impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
SGF5N150UF
1500
±
20
10
5
20
62.5
25
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
P
D
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
2.0
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
Switching Power Supply - High Input Voltage Off-line Converter
G C E
TO-3PF
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGF5N150UFTU | 功能描述:IGBT 晶體管 1500V / 5A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGF80N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGF80N60UFTU | 功能描述:IGBT 晶體管 Discrete Hi-P IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGF9 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For C to X-band Local Oscillator and Amplifier |
| SGFEB1024-120-NA | 制造商:TRANSITION NETWORKS 功能描述:Transition Stand-Alone - Media converter - 10Base-T, 1000Base-LX, 100Base-TX, 10 |
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