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參數資料
| 型號： | SGH13N60UFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness |
| 中文描述： | 13 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 308K |
| 代理商： | SGH13N60UFD |
FEATURES
* High Speed Switching
* Low Saturation Voltage
: V
CE
(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
Notes:
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
Tj
Tstg
T
L
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ Tc = 25
°
C
Collector Current @ Tc = 100
°
C
Pulsed Collector Current
Diode Continuous Forward Current @ Tc = 100
°
C
Diode Maximum Forward Current
Maximum Power Dissipation @Tc = 25
°
C
Maximum Power Dissipation @Tc = 100
°
C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Purposes, 1/8
”
from case for 5 seconds
Rating
600
±
20
13
6.5
52
8
56
60
25
-55 ~ 150
-55 ~ 150
300
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
°
C
G
C
E
TO-3P
SGH13N60UFD
N-CHANNEL IGBT
1999 Fairchild Semiconductor Corporation
Rev.B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGH13N60UFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH15N120RUF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH15N120RUFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH15N120RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH15N120RUFTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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