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參數資料
| 型號： | SGM2014AN |
| 廠商： | Sony Corporation |
| 英文描述： | GaAs N-channel Dual Gate MES FET |
| 中文描述： | 砷化鎵N溝道雙柵場效應晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 51K |
| 代理商： | SGM2014AN |
Description
The SGM2014AM is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.
Features
Low voltage operation
Low noise: NF = 1.5dB (typ.) at 900MHz
High gain: Ga = 18dB (typ.) at 900MHz
Low cross-modulation
High stability
Built-in gate-protection diode
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
G1S
V
G2S
I
D
P
D
Tch
Tstg
12
–5
–5
55
150
150
V
V
V
mA
mW
°C
°C
–55 to +150
– 1 –
SGM2014AM
E96Y09-PS
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SGM2014M | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET |
| SGM2015 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low Power, Low Dropout, 250mA, RF - Linear Regulators |
| SGM2015-1.5 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low Power, Low Dropout, 250mA, RF - Linear Regulators |
| SGM2015-1.5YN5/TR | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low Power, Low Dropout, 250mA, RF - Linear Regulators |
| SGM2015-1.8 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Low Power, Low Dropout, 250mA, RF - Linear Regulators |
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