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參數資料
| 型號： | SGP30N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約快速IGBT技術 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 425K |
| 代理商： | SGP30N60 |
SGP30N60,
SGB30N60
SGW30N60
1
Jul-02
Fast IGBT in NPT-technology
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP30N60
SGB30N60
SGW30N60
600V
30A
2.5V
150
°
C
TO-220AB
TO-263AB
TO-247AC
Q67040-A4463
Q67041-A4713
Q67040-S4237
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
41
30
I
Cpuls
-
112
112
V
GE
E
AS
±
20
165
V
Avalanche energy, single pulse
I
C
= 30 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
250
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-247-3-1
(TO-247AC)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
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| SGB30N60 | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| SGP30N60 | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| SGW30N60 | Fast S-IGBT in NPT-technology( NPT 技術中的快速 S-IGBT) |
| SGD-100T | C to X Band, Mixer, Modulator Applications |
| SGD-100 | GaAs Schottky Barrier Diode（C to X Band, Mixer, Modulator Applications）(應用于C到X帶寬，混頻器和調制器的砷化鎵肖特基勢壘二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGP30N60 | 制造商:Infineon Technologies AG 功能描述:IGBT TO-220 |
| SGP30N60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
| SGP30N60_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
| SGP30N60HS | 功能描述:IGBT 晶體管 HIGH SPEED NPT TECH 600V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGP30N60HS_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation |
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