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參數(shù)資料
| 型號： | SGW23N60UFDTM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 618K |
| 代理商： | SGW23N60UFDTM |
2002 Fairchild Semiconductor Corporation
SGW23N60UFD Rev. A1
IGBT
S
G
W23N60UFD
SGW23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
High input impedance
CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
Description
SGW23N60UFD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C23
A
Collector Current
@ TC = 100°C12
A
ICM (1)
Pulsed Collector Current
92
A
IF
Diode Continuous Forward Current
@ TC = 100°C12
A
IFM
Diode Maximum Forward Current
92
A
PD
Maximum Power Dissipation
@ TC = 25°C
100
W
Maximum Power Dissipation
@ TC = 100°C40
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
1.2
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
40
°C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
E
C
D2-PAK
G
C
E
G
C
E
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PDF描述 |
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| SGW5N60RUFDTM | |
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| SH3 | 20 A, 200 V, SILICON, SIGNAL DIODE |
| SH8K2TB | 6 A, 30 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET |
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