- 您現在的位置：買賣IC網 > PDF目錄368614 > SI2312DS-T1 (Vishay Intertechnology,Inc.) N-Channel 20-V (D-S) MOSFET PDF資料下載
參數資料
| 型號： | SI2312DS-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | SI2312DS-T1 |
Si2312DS
Vishay Siliconix
Document Number: 71338
S-31990—Rev. D, 13-Oct-03
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.033 @ V
GS
= 4.5 V
4.9
20
0.040 @ V
GS
= 2.5 V
4.4
0.051 @ V
GS
= 1.8 V
3.9
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2312DS (C2)*
*Marking Code
Ordering Information: Si2312DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.9
3.77
T
A
= 70 C
3.9
3.0
A
Pulsed Drain Current
b
I
DM
15
Avalanche Current
b
L = 0 1 mH
L = 0.1 mH
I
AS
15
Single Avalanche Energy
E
AS
11.25
mJ
Continuous Source Current (Diode Conduction)
a
I
S
1.0
A
Power Dissipation
a
T
A
= 25 C
P
D
1.25
0.75
W
T
A
= 70 C
0.80
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
75
100
Steady State
120
166
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
相關PDF資料 |
PDF描述 |
|---|---|
| SI2318DS-T1 | N-Channel 40-V (D-S) MOSFET |
| SI2318DS | N-Channel; MOSFET for general applications |
| SI2341DS | P-Channel 30-V (D-S) MOSFET |
| SI2341DS-T1 | P-Channel 30-V (D-S) MOSFET |
| SI3454ADV | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI2312DS-T1-E3 | 功能描述:MOSFET 20V 3.77A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2312DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2314EDS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI2314EDS-T1 | 功能描述:MOSFET 20V 4.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2314EDS-T1-E3 | 功能描述:MOSFET 20V 4.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。