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參數(shù)資料
| 型號(hào)： | SI3948 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 雙N溝道MOSFET的邏輯電平的PowerTrench |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 95K |
| 代理商： | SI3948 |
April 2001
SI3948DV
Dual N-Channel Logic Level PowerTrench
MOSFET
General Description
Features
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise note
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current - Continuous
2.5
A
- Pulsed
10
P
D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
0.9
(Note 1c)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
SI3948DV Rev.A
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
2.5 A, 30 V. R
DS(ON)
= 0.095
@ V
GS
= 10 V
R
DS(ON)
= 0.145
@ V
GS
= 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
D1
S2
G1
D2
.561
S1
G2
SuperSOT -6
pin
1
1
5
3
2
6
4
2001 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3948DV | Dual N-Channel Logic Level PowerTrench MOSFET |
| SI4435DY | 30V P-Channel PowerTrench MOSFET |
| SI4435DY | SHROUD, PRIVACY; RoHS Compliant: Yes |
| SI4450DY | KEYPAD 4 KEY ILLUM ARROW KEYS |
| SI4466 | Single N-Channel 2.5V Specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3948DV | 功能描述:MOSFET 30V 2.5A DUAL N-CH TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3948DV-T1 | 功能描述:MOSFET 30V 2.5A DUAL N-CH TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3948DVT1E3 | 制造商:VISHAY 功能描述:Pb Free |
| SI3948DV-T1-E3 | 功能描述:MOSFET 30V 2.5A DUAL N-CH TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3948DV-T1-GE3 | 功能描述:MOSFET 30V 2.5A 1.15W 105mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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