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參數資料
| 型號： | SI4435DY |
| 廠商： | International Rectifier |
| 英文描述： | SHROUD, PRIVACY; RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 30V的，的Rds（on）\u003d 0.020ohm |
| 文件頁數： | 1/5頁 |
| 文件大小： | 93K |
| 代理商： | SI4435DY |
October 2001
SI4435DY
30V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
SI4435DY Rev D1(W)
General Description
This PChannel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–8.8 A, –30 V
R
DS(ON)
= 20 m
@ V
GS
= –10 V
R
DS(ON)
= 35 m
@ V
GS
= –4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
S
D
D
S
S
S
SO-8
D
D
D
G
D
D
D
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±
20
–8.8
–50
2.5
1.2
1
–55 to +175
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
SI4435DY
SI4435DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4435DY | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, MOSFET |
| SI4435DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4435DY_Q | 功能描述:MOSFET 30V SinGLE P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4435DYPBF | 功能描述:MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4435DYPBF | 制造商:International Rectifier 功能描述:MOSFET ((NW)) |
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