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參數資料
| 型號： | SI4466DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 15000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | SI4466DY |
Si4466DY
Rev.
A
Si4466DY
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
advanced
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Battery protection
January
200
1
Features
15 A, 20 V. R
DS(on)
= 0.0075
@ V
GS
= 4.5 V
R
DS(on)
= 0.010
@ V
GS
= 2.5 V.
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
200
1
Fairchild Semiconductor
International
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
20
Units
V
Drain-Source Voltage
Gate-Source Voltage
±
12 V
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
15
50
2.5
1.2
1
A
P
D
W
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
4466
Si4466DY
Device
Reel Size
13
’’
Tape Width
12mm
Quantity
2500 units
6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G
S
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| SI4467DY | P-Channel 1.8V Specified PowerTrench MOSFET |
| SI4480DY | 80V N-Channel PowerTrench MOSFET |
| SI4542 | 30V Complementary PowerTrench MOSFET |
| SI4542D | 30V Complementary PowerTrench MOSFET |
| SI4542DY | 30V Complementary PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4466DY | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI4466DY03 | 制造商:SILICONIX 功能描述:New |
| SI4466DY-E3 | 功能描述:MOSFET 20V 13.2A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4466DYT1 | 制造商:Vishay Siliconix 功能描述: |
| SI4466DY-T1 | 功能描述:MOSFET 20V 13.2A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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