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參數資料
| 型號： | SI4542DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V Complementary PowerTrench MOSFET |
| 中文描述： | 6 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 56K |
| 代理商： | SI4542DY |
January 2001
2001 Fairchild Semiconductor International
Si4542DY Rev A
Si4542DY
30V Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
Features
Q1
:
N-Channel
6 A, 30 V
R
DS(on)
= 28 m
@ V
GS
= 10V
R
DS(on)
= 35 m
@ V
GS
= 4.5V
Q2
:
P-Channel
–6 A, –30 V
R
DS(on)
= 32 m
@ V
GS
= –10V
R
DS(on)
= 45 m
@ V
GS
= –4.5V
S
D
SO-8
D
D
D
G
D1
D1
D2
D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
30
±
20
6
20
–30
±
20
–6
–20
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
1.6
1.2
1
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
4542
Si4542DY
Reel Size
13”
Tape width
12mm
Quantity
2500 units
S
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PDF描述 |
|---|---|
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| SI4963DY | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| SI6410DQ | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4542DY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8 |
| SI4542DY-E3 | 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4542DY-T1 | 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4542DY-T1-E3 | 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4542DY-T1-GE3 | 功能描述:MOSFET 30V 6.9/6.1A 2.0W 25/32mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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