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參數資料
| 型號： | SI6410DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.8 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 162K |
| 代理商： | SI6410DQ |
October 2001
2001 Fairchild Semiconductor Corporation
Si6410DQ Rev B(W)
Si6410DQ
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V to 20V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
7.8 A, 30 V
R
DS(ON)
= 14 m
@ V
GS
= 10 V
R
DS(ON)
= 21 m
@ V
GS
= 4.5 V
Extended V
GSS
range (
±
20V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
30
±
20
7.8
20
1.4
1.1
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
(Note 1)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
114
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
6410
Si6410DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6410DQ-T1 | 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6410DQ-T1-E3 | 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6410DQ-T1-GE3 | 功能描述:MOSFET 30V 7.8A 1.5W 14mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6413DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6413DQ-T1-E3 | 功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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