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參數資料
| 型號： | SI6435DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 110K |
| 代理商： | SI6435DQ |
September 2001
2001 Fairchild Semiconductor Corporation
Si6435DQ Rev B(W)
Si6435DQ
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
–4.5 A, –30 V R
DS(ON)
= 40 m
@ V
GS
= –10 V
R
DS(ON)
= 70 m
@ V
GS
= –4.5 V
Extended V
GSS
range (
±
20V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation
Ratings
–30
±
20
–4.5
–30
1.3
0.6
Units
V
V
A
(Note 1)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
114
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
6435
Si6435DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
S
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PDF描述 |
|---|---|
| SI6923 | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| SI6923DQ | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| SI6928DQ | Dual 30V N-Channel PowerTrench MOSFET |
| SI692DQ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| SI6933DQ | Dual 30V P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6435DQ-T1 | 功能描述:MOSFET 30V 4.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6435DQ-T1-E3 | 功能描述:MOSFET 30V 4.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6436DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Rated MOSFET |
| SI6436DQ-T1 | 功能描述:MOSFET 30V 4.4A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6441DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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