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參數(shù)資料
| 型號(hào)： | SI6933DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 3500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 83K |
| 代理商： | SI6933DQ |
September 2001
2001 Fairchild Semiconductor Corporation
Si6933DQ Rev. B (W)
Si6933DQ
Dual 30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild's Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V –20V).
Applications
Load switch
Battery protection
DC/DC conversion
Power management
Features
–3.5 A, –30 V,
R
DS(ON)
= 45 m
@ V
GS
= –10 V.
R
DS(ON)
= 85 m
@ V
GS
= –4.5V.
Extended V
GSS
range (
±
20V) for battery applications
Low gate charge (8nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Ratings
–30
±
20
–3.5
–20
Units
V
V
A
(Note 1)
P
D
T
J
, T
STG
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.0
0.6
W
°
C
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
100
125
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
6933
Si6933DQ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6933DQ-T1 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:P-CHAN 30V TRENCH 32M CELL MOSFET D |
| SI6933DQ-T1-GE3 | 功能描述:MOSFET 30V 3.5A 1.0W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6943 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
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