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參數資料
| 型號： | SI6943DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2500 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | SI6943DQ |
Sept 2001
2001 Fairchild Semiconductor Corporation
Si6943DQ Rev. B (W)
Si6943DQ
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel –2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (–2.5V to –8V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–2.5 A, –12 V,
R
DS(ON)
= 110 m
@ V
GS
= –4.5 V.
R
DS(ON)
= 180 m
@ V
GS
= –2.5V.
Extended V
GSS
range (
±
8V) for battery applications
Low gate charge (4.6nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Ratings
–12
±
8
–2.5
–20
Units
V
V
A
(Note 1)
P
D
T
J
, T
STG
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.0
0.6
W
°
C
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
6943
Si6943DQ
(Note 1a)
100
125
°
C/W
(Note 1b)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6943DQ-T1 | 功能描述:MOSFET 12V 2.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6946DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET |
| SI6946DQ-T1 | 功能描述:MOSFET 20V 2.8A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6946DQ-T1-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 2.8A 8-Pin TSSOP T/R |
| SI6953DQ | 功能描述:MOSFET 20V/20V P-Channel Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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