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參數(shù)資料
| 型號(hào)： | SI7463DP |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 40-V (D-S) MOSFET |
| 中文描述： | P通道40 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 73K |
| 代理商： | SI7463DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Automotive
12-V Boardnet
High-Side Switches
Motor Drives
Si7463DP
Vishay Siliconix
Document Number: 72440
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.0092 @ V
GS
=
10 V
18.6
0.014 @ V
GS
=
4.5 V
15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
S
G
D
P-Channel MOSFET
Ordering Information: Si7463DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
18.6
11
T
A
= 70 C
15
8.9
A
Pulsed Drain Current
I
DM
60
continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.3
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7463DP-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 11A 8PIN PWRPAK SO - Tape and Reel |
| SI7463DP-T1-E3 | 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7463DP-T1-GE3 | 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7463DP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET, -40V, 18.6A, SOIC |
| SI7464DP | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 6-V (D-S) Fast Switching MOSFET |
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