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參數資料
| 型號： | SI9426 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | MINIATURE POWER RELAY |
| 中文描述： | 單N通道，2.5V的MOSFET的指定 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | SI9426 |
January 2001
2001 Fairchild Semiconductor International
SI9426DY Rev A (W)
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s high cell density
DMOS technology process that has been especially
tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching
performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
DC/DC converter
Load switch
Features
10.5 A, 20 V.
R
DS(ON)
= 13.5 m
@ V
GS
= 4.5 V
R
DS(ON)
= 16 m
@ V
GS
= 2.7 V
High cell density for extremely low R
DS(ON)
High power and current handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
8
10.5
30
2.5
1.2
1
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
9426
SI9426DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI9426DY | 功能描述:MOSFET SO8 NCH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9426DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 10A 8-Pin SOIC N T/R |
| SI9428DY | 功能描述:MOSFET 20V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9428DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOIC N T/R |
| SI9430DT-T1 | 制造商:Vishay Siliconix 功能描述: |
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